tpd1032f 2013-12-26 1 toshiba intelligent power device silicon monolithic power mos integrated circuit tpd1032f 2-in-1 low-side power switch fo r motor, solenoid and lamp drive the tpd1032f is a 2-in-1 low-side switch. the ic has a vertical mosfet output which can be directly driven from a cmos or ttl logic circuit (e.g., an mpu). the ic is equipped with intelligent self-protection functions. features ? two built-in power ic chips with a new structure combining a control block and a vertical power mosfet (l 2 - -mos) on each chip. ? can directly drive a power load from a cmos or ttl logic. ? built-in protection circuits agai nst overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). ? low drain-source on-resistance: r ds (on) = 0.4 (max) (@v in = 5 v, i d = 1 a, t ch = 25c) ? low leakage current: i dss = 10 a (max) (@v in = 0 v, v ds = 20 v, t ch = 25c) ? low input current: i in = 300 a (max) (@v in = 5 v, t ch = -40 110c) ? 8-pin sop package for surface with embossed-tape packing. pin assignment (top view) due to its mos structure, this product is sensitive to static electricity. marking weight: 0.08 g (typ.) source1 in1 source2 1 2 3 8 6 7 drain1 drain1 drain2 in2 4 5 drain2 tpd1032 f lot no. note part no. (or abbreviation code) note: a line under a lot no. identifies the indication of product labels. not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatib le or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. start of commercial production 1999-10
tpd1032f 2013-12-26 2 block diagram pin description pin no. symbol pin description 1 source1 source pin 1 2 in1 input pin 1 this pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 3 source2 source pin 2 4 in2 input pin 2 this pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. 5, 6 drain2 drain pin 2 drain current is limited (by current limiter) if it exceeds 3 a (min) in order to protect the ic. 7, 8 drain1 drain pin 1 drain current is limited (by current limiter) if it exceeds 3 a (min) in order to protect the ic. drain1 in1 overcurrent detection /protection 8 7 overtemperature detection /protection 1 2 source1 drain1 drain2 in2 overcurrent detection /protection 6 5 overtemperature detection /protection 3 4 source2 drain2
tpd1032f 2013-12-26 3 timing chart note2: the overheating detector circuits feature hysteresis. after overheat ing is detected, normal operation is restored only when the channel temperature falls by t he hysteresis amount (5c typ.) in relation to the overheating detect ion temperature. truth table in v out mode l h h l normal l h h h overcurrent l h h h overtemperature overcurrent protection input signal output current current limiting (limiter) overtemperature protection (note2) overtemperature protection
tpd1032f 2013-12-26 4 absolute maximum ratings (ta = 25c) characteristics symbol rating unit dc 20 drain-source voltage pulse v ds 40 v drain current i d internally limited a input voltage v in ? 0.3 to 7 v single-device operation (note4a) p d(1) 0.95 power dissipation (ta=25 )(note 3a) single-device value at dual operation (note4b) p d(2) 0.54 single-device operation (note4a) p d(3) 0.38 power dissipation (ta=25 )(note 3b) single-device value at dual operation (note4b) p d(4) 0.20 w single pulse active clam p capability (note 5) e as 90 mj active clamp current i ar 3 a repetitive active clamp capability (note 6) e ar 54 j operating temperature t opr ? 40 to 110 c channel temperature t ch 150 c storage temperature t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit single-device operation (note 4a) r th (ch-a)(1) 132 thermal resistance, channel to ambient (note3a) single-device value at dual operation (note 4b) r th (ch-a)(2) 231 c/w single-device operation (note 4a) r th (ch-a)(1) 330 thermal resistance, channel to ambient (note3b) single-device value at dual operation (note 4b) r th (ch-a)(2) 625 c/w note 3: fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) a) device mounted on a glass-epoxy board (a) b) device mounted on a glass-epoxy board (b)
tpd1032f 2013-12-26 5 note 4: a) the power dissipation and thermal re sistance values are shown for a single device. (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal re sistance values are shown for a single device. (during dual operation, power is evenly applied to both device.) note 5: active clamp capability (single pulse) test condition v dd = 25 v, starting t ch = 25c, l = 10 mh, i ar = 3 a, r g = 25 note 6: repetitive rating, pulse width li mited by maximum channel temperature. electrical characteristics characteristics symbol test circuit test condition min typ. max unit drain-source clamp voltage v (cl) dss ? t ch =-40 110 v in = 0 v, i d =1ma 40 ? 60 v t ch =25 1.0 ? 2.8 input threshold voltage v th ? t ch =-40 110 v ds = 13 v, i d =10ma 0.9 ? 3.0 v t ch =25 ? 3 ? 7 protective circuit operation input voltage range v in (opr) ? t ch =-40 110 ? 3.5 ? 7 v t ch =25 ? ? 10 drain cut-off current i dss ? t ch =-40 110 v in = 0 v, v ds =20v ? ? 100 a i in (1) ? t ch =25 v in = 5 v, at normal operation ? ? 300 input current i in (2) ? t ch =-40 110 v in = 5 v, when overcurrent protective circuit is actuated ? ? 350 a t ch =25 ? 0.25 0.4 drain-source on resistance r ds (on) ? t ch =-40 110 v in = 5 v, i d = 1 a ? ? 0.6 overtemperature protection t s ? ? v in = 5 v 150 160 ? c t ch =25 3 3.7 ? overcurrent protection i s ? t ch =-40 110 v in = 5 v 2 ? ? a t ch =25 ? ? 30 t on t ch =-40 110 ? ? 60 t ch =25 ? ? 60 switching time t off 1 t ch =-40 110 v dd = 13 v, v in = 0v/5 v, i d = 1 a ? ? 90 s source-drain diode forward voltage v dsf ? t ch =25 i f = 3 a, v in = 0 v ? ? 1.7 v test circuit 1 switching time measuring circuit test circuit measured waveforms v in waveform v out waveform 5 v 90% t on 10% 10% 90% t off 13 v to be set so that i d = 1 a. v 13 v p.g tpd1032f in out gnd
tpd1032f 2013-12-26 6 package dimensions weight: 0.08 g (typ.)
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